| CPC G06F 30/392 (2020.01) [H01L 21/041 (2013.01); H01L 27/0207 (2013.01)] | 20 Claims |
|
1. An integrated circuit (IC) comprising:
a first semiconductor cell region that includes a first active region in a substrate and extending in a first direction, the first active region being configured with a first dopant type;
a second semiconductor cell region, that abuts the first semiconductor cell region in a second direction, and includes second and third active regions in the substrate and extending in the first direction, the second active region being configured with a second dopant type different from the first dopant type, the third active region being configured with the first dopant type, and the second active region being between the first and third active regions;
a third semiconductor cell region that abuts the second semiconductor cell region in the second direction, and that includes a fourth active region in the substrate and extending in the first direction, the fourth active region being configured with the second dopant type, and the third active region being between the fourth active region and the second active region; and
wherein, relative to the second direction:
the second semiconductor cell region has a height 2H; and
the first, second and third semiconductor cell regions collectively have a height 3H; and
a fourth semiconductor cell region, that abuts the first semiconductor cell region in the second direction, wherein at least one of the first semiconductor cell region through the third semiconductor cell region is at least one pitch shorter in the first direction than the fourth semiconductor cell region.
|