US 12,072,633 B2
Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof
Chih-Tsung Shih, Hsinchu (TW); Yu-Hsun Wu, New Taipei (TW); Bo-Tsun Liu, Taipei (TW); and Tsung-Chuan Lee, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 14, 2023, as Appl. No. 18/334,640.
Application 17/848,139 is a division of application No. 16/900,384, filed on Jun. 12, 2020, granted, now 11,392,022, issued on Jul. 19, 2022.
Application 18/334,640 is a continuation of application No. 17/848,139, filed on Jun. 23, 2022, granted, now 11,720,025.
Prior Publication US 2023/0324804 A1, Oct. 12, 2023
Int. Cl. G03F 7/20 (2006.01); G03F 1/24 (2012.01)
CPC G03F 7/2004 (2013.01) [G03F 1/24 (2013.01)] 20 Claims
 
1. A method, comprising:
receiving a substrate with a photoresist layer over the substrate to an extreme ultraviolet (EUV) exposure chamber; and
directing an EUV radiation from a source chamber onto the photoresist layer, wherein directing the EUV radiation comprises reflecting the EUV radiation by using a photomask, the photomask comprising a capping layer having a ruthenium complex with a ligand, the ligand having a halogen element, a pentavalent element, a hexavalent element or combinations thereof.