CPC G03F 7/2004 (2013.01) [G03F 1/24 (2013.01)] | 20 Claims |
1. A method, comprising:
receiving a substrate with a photoresist layer over the substrate to an extreme ultraviolet (EUV) exposure chamber; and
directing an EUV radiation from a source chamber onto the photoresist layer, wherein directing the EUV radiation comprises reflecting the EUV radiation by using a photomask, the photomask comprising a capping layer having a ruthenium complex with a ligand, the ligand having a halogen element, a pentavalent element, a hexavalent element or combinations thereof.
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