US 12,072,631 B2
Resist underlayer film-forming composition and method for forming resist pattern using the same
Shou Shimizu, Toyama (JP); Ryuta Mizuochi, Toyama (JP); Hiroyuki Wakayama, Toyama (JP); and Yasunobu Someya, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Appl. No. 17/281,362
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
PCT Filed Oct. 1, 2019, PCT No. PCT/JP2019/038741
§ 371(c)(1), (2) Date Mar. 30, 2021,
PCT Pub. No. WO2020/071361, PCT Pub. Date Apr. 9, 2020.
Claims priority of application No. 2018-190024 (JP), filed on Oct. 5, 2018.
Prior Publication US 2021/0397090 A1, Dec. 23, 2021
Int. Cl. G03F 7/004 (2006.01); C08G 59/22 (2006.01); C08G 59/26 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/11 (2013.01) [C08G 59/223 (2013.01); C08G 59/26 (2013.01); H01L 21/0274 (2013.01)] 25 Claims
 
1. A resist underlayer film-forming composition, comprising an organic solvent and a polymer, wherein one or more terminal ends of the polymer are represented by the following formula (1) or (2):

OG Complex Work Unit Chemistry
wherein, in formula (1) and formula (2),
X represents a divalent organic group;
A represents an aryl group having 6 to 40 carbon atoms;
R1 represents a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms;
R2 and R3 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms which may be substituted or an aryl group having 6 to 40 carbon atoms which may be substituted;
n1 represents an integer of 2 to 12;
n3 represents an integer of 1 to 12; and
n2 represents an integer of 0 to 11.