US 12,072,626 B2
Organometallic radiation patternable coatings with low defectivity and corresponding methods
Benjamin L. Clark, Corvallis, OR (US); Gaetano Giordano, Ixelles (BE); Shu-Hao L. Chang, Leuven (BE); Dominick Smiddy, Corvallis, OR (US); Mark Geniza, Corvallis, OR (US); Craig M. Gates, Corvallis, OR (US); Jan Doise, Leuven (BE); and Peter de Schepper, Wijnegem (BE)
Assigned to Inpria Corporation, Corvallis, OR (US)
Filed by Inpria Corporation, Corvallis, OR (US)
Filed on Feb. 19, 2021, as Appl. No. 17/180,500.
Prior Publication US 2022/0269169 A1, Aug. 25, 2022
Int. Cl. G03F 7/004 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/0042 (2013.01) [G03F 7/162 (2013.01); G03F 7/168 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A wafer structure comprising a substrate and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion, wherein the radiation sensitive organometallic coating comprises a monoalkyl tin composition and is formed by depositing a hydrolysable precursor composition comprising a hydrolysable tin bond and no more than about 10 particles per mL with a particle size of at least about 70 nm, and wherein the wafer structure has a smooth top surface,
wherein the radiation sensitive organometallic coating, when fully hydrolyzed, comprises a composition represented by the formula RSnO(1.5-(x/2))(OH)x where 0<x≤3, wherein R is an organic ligand with 1-31 carbon atoms, with a carbon atom bonded to Sn and with one or more carbon atoms optionally substituted with one or more heteroatom functional groups.