	US 12,072,619 B2
	Reflective mask blank, reflective mask, and method for manufacturing reflective mask and semiconductor device
Masanori Nakagawa, Tokyo (JP); and Tsutomu Shoki, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Appl. No. 17/609,166
Filed by HOYA CORPORATION, Tokyo (JP)
PCT Filed Jun. 18, 2020, PCT No. PCT/JP2020/023951 § 371(c)(1), (2) Date Nov. 5, 2021, PCT Pub. No. WO2020/256064, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 2019-114770 (JP), filed on Jun. 20, 2019.
Prior Publication US 2022/0229357 A1, Jul. 21, 2022
Int. Cl. G03F 1/24 (2012.01); G03F 1/46 (2012.01); G03F 7/20 (2006.01)

CPC G03F 1/24 (2013.01) [G03F 1/46 (2013.01); G03F 7/2004 (2013.01)]

19 Claims

1. A reflective mask blank comprising: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film, wherein

the absorber film comprises an absorption layer and a reflectance adjustment layer,

the absorption layer comprises tantalum (Ta), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D),

the absorption layer comprises a lower surface region comprising a surface on the substrate side and an upper surface region comprising a surface on a side opposite to the substrate, and

a total concentration (atomic %) of the at least one additive element in the lower surface region is different from a total concentration (atomic %) of the at least one additive element in the upper surface region.