US 12,072,454 B2
Scintillator, measuring device, mass spectrometer, and electron microscope
Shin Imamura, Tokyo (JP); Toshiaki Kusunoki, Tokyo (JP); Eri Takahashi, Tokyo (JP); Yoshifumi Sekiguchi, Tokyo (JP); and Takayuki Kanda, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 17/787,617
Filed by HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
PCT Filed Nov. 19, 2020, PCT No. PCT/JP2020/043186
§ 371(c)(1), (2) Date Jun. 21, 2022,
PCT Pub. No. WO2021/131436, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 2019-233378 (JP), filed on Dec. 24, 2019.
Prior Publication US 2022/0413169 A1, Dec. 29, 2022
Int. Cl. G01T 1/20 (2006.01); H01J 49/02 (2006.01)
CPC G01T 1/2018 (2013.01) [H01J 49/025 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A scintillator comprising:
a substrate;
a GaN layer provided on an incident side with respect to the substrate and containing GaN;
a quantum well structure provided on the incident side with respect to the GaN layer; and
a conductive layer provided on the incident side with respect to the quantum well structure,
wherein in the quantum well structure, a plurality of light emitting layers containing InGaN and a plurality of barrier layers containing GaN are alternately stacked, and
wherein an oxygen-containing layer containing oxygen is disposed between a barrier layer containing GaN of the quantum well structure and the conductive layer.