US 12,072,313 B2
Graphene transistor and method of manufacturing same
Naruto Miyakawa, Nagaokakyo (JP); Ayumi Shinagawa, Nagaokakyo (JP); Shota Ushiba, Nagaokakyo (JP); Masahiko Kimura, Nagaokakyo (JP); Kazuhiko Matsumoto, Suita (JP); and Takao Ono, Suita (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Kyoto (JP); and OSAKA UNIVERSITY, Osaka (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP); and OSAKA UNIVERSITY, Suita (JP)
Filed on Aug. 17, 2021, as Appl. No. 17/403,915.
Application 17/403,915 is a continuation of application No. PCT/JP2020/004066, filed on Feb. 4, 2020.
Claims priority of application No. 2019-029080 (JP), filed on Feb. 21, 2019.
Prior Publication US 2021/0372966 A1, Dec. 2, 2021
Int. Cl. H01L 23/00 (2006.01); G01N 27/414 (2006.01); H01L 29/16 (2006.01)
CPC G01N 27/4145 (2013.01) [G01N 27/4146 (2013.01); H01L 29/1606 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A graphene transistor comprising:
a graphene layer including at least one sheet of graphene;
a drain electrode and a source electrode each electrically connected to the graphene layer;
a charge donor located on at least one main surface of the graphene layer and including an impurity charge; and
a counter ion having a charge with a sign different from a sign of the impurity charge; wherein
the charge donor is at least one of an insulative substrate that supports the graphene layer and an insulative foreign matter.