US 12,071,709 B2
Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer
Isaho Kamata, Tokyo (JP); Hidekazu Tsuchida, Tokyo (JP); Norihiro Hoshino, Tokyo (JP); Yuichiro Tokuda, Kariya (JP); and Takeshi Okamoto, Kariya (JP)
Assigned to DENSO CORPORATION, Kariya (JP)
Filed by DENSO CORPORATION, Kariya (JP)
Filed on Jul. 31, 2023, as Appl. No. 18/362,117.
Application 18/362,117 is a division of application No. 17/027,840, filed on Sep. 22, 2020.
Claims priority of application No. 2019-173463 (JP), filed on Sep. 24, 2019.
Prior Publication US 2023/0374699 A1, Nov. 23, 2023
Int. Cl. C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 25/10 (2006.01); C30B 29/36 (2006.01); C30B 33/00 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/10 (2013.01); C30B 33/00 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A method for manufacturing a silicon carbide single crystal ingot, comprising:
supplying a raw material gas containing hydrogen gas, monosilane, and hydrocarbon gas to a space in which a seed crystal made of silicon carbide is placed; and
growing a silicon carbide single crystal on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C., wherein
in the supplying and the growing, the temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby to produce a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less.