US 12,071,708 B2
Silicon carbide substrate
Kyoko Okita, Osaka (JP); and Tsubasa Honke, Osaka (JP)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (JP)
Appl. No. 17/611,139
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
PCT Filed Apr. 1, 2020, PCT No. PCT/JP2020/015006
§ 371(c)(1), (2) Date Nov. 13, 2021,
PCT Pub. No. WO2020/235225, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 2019-093882 (JP), filed on May 17, 2019.
Prior Publication US 2022/0220638 A1, Jul. 14, 2022
Int. Cl. B32B 3/00 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); C30B 23/02 (2006.01)
CPC C30B 29/36 (2013.01) [H01L 21/02021 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); C30B 23/02 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A silicon carbide substrate comprising a main surface, wherein
the silicon carbide substrate has a maximum diameter of 150 mm or more, and
in the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.