US 12,071,706 B2
Process for producing a monoocrystalline layer of AlN material by transferring a SiC-6H seed to a Si carrier substrate and epitaxially growing the monocrystalline layer of AlN material and substrate for the epitaxial growth of a monocrystalline layer of AlN material
Bruno Ghyselen, Seyssinet (FR)
Assigned to SOITEC, Bernin (FR)
Appl. No. 17/041,371
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2019, PCT No. PCT/IB2019/000205
§ 371(c)(1), (2) Date Sep. 24, 2020,
PCT Pub. No. WO2019/186266, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 1800254 (FR), filed on Mar. 28, 2018.
Prior Publication US 2021/0032772 A1, Feb. 4, 2021
Int. Cl. C30B 33/06 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01)
CPC C30B 25/18 (2013.01) [C30B 23/025 (2013.01); C30B 29/36 (2013.01); C30B 29/403 (2013.01); H01L 21/02447 (2013.01); H01L 21/0254 (2013.01); H01L 21/02598 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A process for producing a monocrystalline layer of AlN material, comprising:
transferring a monocrystalline seed layer of SiC-6H material to a carrier substrate of silicon material, the carrier substrate of silicon material comprising two silicon wafers joined together and a detachable interface buried within the carrier substrate of silicon material; and
epitaxially growing the monocrystalline layer of AlN material on the monocrystalline seed layer of SiC-6H material,
wherein transferring the monocrystalline seed layer of SiC-6H material to the carrier substrate of silicon material comprises joining a monocrystalline substrate of SiC-6H material to the carrier substrate of silicon material by molecular adhesion of the monocrystalline substrate of SiC-6H material to the carrier substrate of silicon material, the molecular adhesion comprising bonding the monocrystalline substrate of SiC-6H material to the carrier substrate of silicon material at ambient temperature and annealing a bonding interface between the monocrystalline substrate of SiC-6H material and the carrier substrate of silicon material to consolidate the bonding interface.