CPC C30B 15/00 (2013.01) [C30B 29/06 (2013.01)] | 4 Claims |
1. An apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus comprising:
a main chamber configured to house
a crucible configured to accommodate a raw-material melt, and
a heater configured to heat the raw-material melt;
a pulling chamber continuously provided at an upper portion of the main chamber and configured to accommodate a single crystal grown and pulled;
a cooling cylinder extending from at least a ceiling portion of the main chamber toward the raw-material melt so as to surround the single crystal being pulled, the cooling cylinder being configured to be forcibly cooled with a coolant;
an auxiliary cooling cylinder fitted in an inside of the cooling cylinder, wherein
the auxiliary cooling cylinder comprises any one or more materials of graphite, carbon composite, stainless steel, molybdenum, and tungsten,
the auxiliary cooling cylinder comprises a cover covering a bottom surface of the cooling cylinder facing the raw-material melt, the cover protruding from the inside of the cooling cylinder toward an outside of the cooling cylinder and covering the bottom surface of the cooling cylinder, and
a gap between the cover of the auxiliary cooling cylinder and the bottom surface of the cooling cylinder is 1.0 mm or less; and
a heat shielding member extending from the ceiling portion of the main chamber and surrounding the bottom surface of the cooling cylinder and the cover of the auxiliary cooling cylinder.
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