US 12,071,699 B2
Apparatus for electro-chemical plating
Kuo-Lung Hou, Taichung (TW); Ming-Hsien Lin, Taichung (TW); and Tsung-Cheng Wu, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/873,136.
Application 17/873,136 is a division of application No. 17/232,161, filed on Apr. 16, 2021, granted, now 11,427,924.
Prior Publication US 2022/0356597 A1, Nov. 10, 2022
Int. Cl. C25D 21/12 (2006.01); C25D 5/54 (2006.01); C25D 7/12 (2006.01); C25D 17/00 (2006.01); C25D 21/00 (2006.01)
CPC C25D 21/12 (2013.01) [C25D 5/54 (2013.01); C25D 7/12 (2013.01); C25D 17/001 (2013.01); C25D 21/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for depositing a conductive material on a wafer, the apparatus comprising:
a cell chamber into which a plating solution is provided from a bottom of the cell chamber;
a plurality of openings passing through a sidewall of the cell chamber;
a flow regulator arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings; and
a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other, wherein the controller controls the flow regulator using a differential flow rate of the plating solution measured at the flow regulator as a control parameter.