US 12,071,690 B2
Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same
Narae Han, Suwon-si (KR); Jeonggyu Song, Seongnam-si (KR); Yongsung Kim, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 24, 2020, as Appl. No. 16/827,895.
Claims priority of application No. 10-2019-0144530 (KR), filed on Nov. 12, 2019.
Prior Publication US 2021/0140049 A1, May 13, 2021
Int. Cl. C23C 16/56 (2006.01); C01F 7/02 (2022.01); C01G 15/00 (2006.01); C01G 25/02 (2006.01); C01G 27/02 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H10B 12/00 (2023.01); H10B 53/00 (2023.01)
CPC C23C 16/56 (2013.01) [C01F 7/02 (2013.01); C01G 15/00 (2013.01); C01G 25/02 (2013.01); C01G 27/02 (2013.01); C23C 14/08 (2013.01); C23C 14/081 (2013.01); C23C 14/5806 (2013.01); C23C 16/40 (2013.01); C23C 16/403 (2013.01); C23C 16/45525 (2013.01); H10B 12/00 (2023.02); H10B 53/00 (2023.02); C01P 2006/40 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A thin film structure comprising:
a first conductive layer;
a first dielectric material layer on the first conductive layer, the first dielectric material layer having a tetragonal crystal phase and including a metal oxide;
an indium oxide-based seed material layer on the first dielectric material layer, the indium oxide-based seed material layer having a thickness less than a thickness of the first dielectric material layer and configured to induce the tetragonal crystal phase of the first dielectric material layer; and
a second conductive layer formed on the seed material layer, the second conductive layer including a conductive material different from the indium oxide-based seed material.