US 12,071,687 B2
Plasma processing method and plasma processing apparatus
Michiko Nakaya, Miyagi (JP); Toru Hisamatsu, Miyagi (JP); Shinya Ishikawa, Miyagi (JP); Sho Kumakura, Miyagi (JP); Masanobu Honda, Miyagi (JP); and Yoshihide Kihara, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 31, 2022, as Appl. No. 17/900,577.
Application 17/900,577 is a continuation of application No. 16/522,890, filed on Jul. 26, 2019, granted, now 11,459,655.
Claims priority of application No. 2018-140334 (JP), filed on Jul. 26, 2018; and application No. 2019-104041 (JP), filed on Jun. 3, 2019.
Prior Publication US 2022/0411928 A1, Dec. 29, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC C23C 16/45536 (2013.01) [C23C 16/45544 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); H01J 37/32834 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a gas supply configured to supply a processing gas to the plasma processing chamber;
a power supply configured to supply power to the plasma processing chamber to generate plasma in the plasma processing chamber; and
a controller,
wherein the controller is configured to cause:
(a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other; and
(b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other,
wherein, in (a), the first film is formed such that the first film formed on a second pair of side walls, which are facing each other with a spacing narrower than that of a first pair of side walls formed on the processing target, is thinner than the first film formed on the first pair of side walls, and
in (b), the second film is formed such that the second film formed on the second pair of side walls is thicker than the second film formed on the first pair of side walls.