CPC C23C 16/45504 (2013.01) [C23C 16/45563 (2013.01); H01J 37/3244 (2013.01); H01J 37/32477 (2013.01)] | 19 Claims |
1. A chemical vapor deposition system for processing a substrate, the system comprising:
a processing chamber having a processing volume enclosed therein, the processing chamber including a lower chamber wall and an upper chamber wall;
a first liner disposed between the lower chamber wall and the processing volume, the first liner including a first fluid guide including a first portion and a second portion, the first portion has a first portion radius, the second portion has a second portion radius; and
a second liner disposed between the upper chamber wall and the processing volume, the second liner including a second fluid guide including a third portion and a fourth portion, the third portion has a third portion radius, the fourth portion has a fourth portion radius, wherein the third portion is opposite the first portion and the fourth portion is opposite the second portion such that a rounded fluid guiding channel is defined between the first fluid guide and the second fluid guide, wherein the first fluid guide and the second fluid guide are continuously rounded surfaces.
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