US 12,070,923 B2
Substrate for epitaxial growth and method for producing same
Teppei Kurokawa, Kudamatsu (JP); Yusuke Hashimoto, Kudamatsu (JP); and Hironao Okayama, Kudamatsu (JP)
Assigned to TOYO KOHAN CO., LTD., Tokyo (JP); and SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Filed by Toyo Kohan Co., Ltd., Tokyo (JP); and Sumitomo Electric Industries, Ltd., Osaka (JP)
Filed on Nov. 10, 2022, as Appl. No. 17/984,371.
Application 17/984,371 is a division of application No. 15/768,902, granted, now 11,524,486, previously published as PCT/JP2016/081314, filed on Oct. 21, 2016.
Claims priority of application No. 2015-209074 (JP), filed on Oct. 23, 2015.
Prior Publication US 2023/0082193 A1, Mar. 16, 2023
Int. Cl. B32B 15/01 (2006.01); B23K 20/02 (2006.01); B32B 15/18 (2006.01); B32B 15/20 (2006.01); C22F 1/08 (2006.01); C30B 1/02 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); H10N 60/01 (2023.01)
CPC B32B 15/015 (2013.01) [B23K 20/023 (2013.01); B32B 15/18 (2013.01); B32B 15/20 (2013.01); C22F 1/08 (2013.01); C30B 1/02 (2013.01); C30B 25/18 (2013.01); C30B 29/02 (2013.01); H10N 60/0576 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A substrate for epitaxial growth, comprising:
a metal base material laminated with a copper layer;
wherein on a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface is less than 1.5%; and
wherein a surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM is Ra1<10 nm.