CPC B28D 5/0011 (2013.01) [H01L 29/1608 (2013.01)] | 18 Claims |
1. A silicon carbide (SiC) wafer comprising:
a silicon face and a carbon face;
a radial doping profile that is variable from a perimeter of the SiC wafer to a center of the SiC wafer; and
a relaxed positive bow from the silicon face.
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