US 12,070,833 B2
Method of using polishing pad
Chunhung Chen, Hsinchu (TW); Jung-Yu Li, Hsinchu (TW); Sheng-Chen Wang, Hsinchu (TW); and Shih-Sian Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 26, 2023, as Appl. No. 18/341,421.
Application 18/341,421 is a division of application No. 16/952,901, filed on Nov. 19, 2020, granted, now 11,691,243.
Application 16/952,901 is a division of application No. 15/647,444, filed on Jul. 12, 2017, granted, now 10,864,612, issued on Dec. 15, 2020.
Claims priority of provisional application 62/434,224, filed on Dec. 14, 2016.
Prior Publication US 2023/0339068 A1, Oct. 26, 2023
Int. Cl. B24B 37/24 (2012.01); B24B 37/005 (2012.01); B24B 37/10 (2012.01); B24B 37/22 (2012.01); B24B 37/26 (2012.01); B24B 49/12 (2006.01); B24B 53/017 (2012.01)
CPC B24B 37/26 (2013.01) [B24B 37/005 (2013.01); B24B 37/10 (2013.01); B24B 37/22 (2013.01); B24B 37/24 (2013.01); B24B 49/12 (2013.01); B24B 53/017 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of using a polishing pad, the method comprising:
applying a slurry to a first location on the polishing pad;
rotating the polishing pad;
spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region comprises a plurality of first grooves;
spreading the slurry across a second region, surrounding the first region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves; and
spreading the slurry across a third region, surrounding the second region of the polishing pad at a third rate less than the first rate and the second rate, wherein the third region comprises a plurality of third grooves.