US 11,744,164 B2
Resistive random access memory device and method for manufacturing the same
Tomohito Kawashima, Yokohama (JP); Takahiro Nonaka, Yokkaichi (JP); Yusuke Arayashiki, Yokkaichi (JP); and Takayuki Ishikawa, Yokkaichi (JP)
Assigned to Kioxia Corporation, Minato-ku (JP)
Filed by Kioxia Corporation, Minato-ku (JP)
Filed on Feb. 25, 2015, as Appl. No. 14/631,242.
Claims priority of application No. 2014-178787 (JP), filed on Sep. 3, 2014.
Prior Publication US 2016/0064661 A1, Mar. 3, 2016
Int. Cl. H01L 45/00 (2006.01); H01L 27/24 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/826 (2023.02) [H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/841 (2023.02); H10N 70/8416 (2023.02); H10N 70/8833 (2023.02); H10B 63/84 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A resistive random access memory device, comprising:
a first interconnection extending in a first direction;
a barrier metal layer of tungsten nitride provided on the first interconnection;
a stacked body layer provided on the barrier metal layer, the stacked body layer comprising
a first material layer including a first material, the first material layer being different from a material of the barrier metal layer, and
a second material layer including a second material which is different from the first material and the material of the barrier metal layer;
a first layer provided directly on the stacked body layer, the first layer including tungsten;
a resistance change layer provided on the first layer and comprising a germanium tellurium antimony;
a second interconnection provided above the resistance change layer and extending in a second direction intersecting the first direction; and
a second layer including tungsten being disposed between the resistance change layer and the second interconnection,
a length of the first interconnection in the first direction being longer than a length of the resistance change layer in the first direction,
a length of the second interconnection in the second direction being longer than a length of the resistance change layer in the second direction, and
the stacked body layer being disposed between the barrier metal layer and the first layer in a third direction, the third direction being orthogonal to the first direction and the second direction,
wherein the first layer completely covers a lower surface of the resistance change layer and the second layer completely covers an upper surface of the resistance change layer.