US 11,744,158 B2
Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component
Bernhard Wagner, Itzehoe (DE); Fabian Lofink, Itzehoe (DE); Dirk Kaden, Itzehoe (DE); and Simon Fichtner, Itzehoe (DE)
Assigned to Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Munich (DE); and Christian-Albrechts-Universitaet zu Kiel, Kiel (DE)
Filed by Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Munich (DE); and Christian-Albrechts-Universitaet zu Kiel, Kiel (DE)
Filed on Sep. 10, 2020, as Appl. No. 17/16,941.
Application 17/016,941 is a continuation of application No. PCT/EP2019/056275, filed on Mar. 13, 2019.
Claims priority of application No. 102018203812.0 (DE), filed on Mar. 13, 2018.
Prior Publication US 2020/0411747 A1, Dec. 31, 2020
Int. Cl. H01L 41/187 (2006.01); H10N 30/853 (2023.01); B81B 7/02 (2006.01); H10N 30/045 (2023.01); H10N 30/50 (2023.01); H10N 30/00 (2023.01); H10N 30/20 (2023.01)
CPC H10N 30/853 (2023.02) [B81B 7/02 (2013.01); H10N 30/045 (2023.02); H10N 30/1051 (2023.02); H10N 30/2042 (2023.02); H10N 30/50 (2023.02); B81B 2201/03 (2013.01)] 18 Claims
OG exemplary drawing
 
1. Ferroelectric material; comprising
a mixed crystal comprising AlN and at least one nitride of a transition metal;
wherein the proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage, the switchover voltage being below a breakdown voltage of the ferroelectric material.