| CPC H10B 63/84 (2023.02) [H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/8265 (2023.02); H10N 70/881 (2023.02)] | 25 Claims |
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1. A method of forming an electronic device, the method comprising:
forming a stack structure comprising vertically alternating insulative structures and additional insulative structures;
forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure;
removing the additional insulative structures to form cell openings;
forming a metal nitride material within the cell openings and adjacent to the insulative structures of the stack structure forming a first conductive material selected from the group consisting of one or more of tungsten, titanium, ruthenium, aluminum, and molybdenum within a portion of the cell openings, the first conductive material directly adjacent to and substantially surrounded by the metal nitride material;
forming a fill material directly adjacent to the first conductive material and within the cell openings, the fill material comprising sacrificial portions;
removing the sacrificial portions of the fill material; and
forming a second conductive material within the cell openings in locations previously occupied by the sacrificial portions of the fill material to form tiers of alternating conductive structures and the insulative structures of the stack structure, the fill material within a central portion of individual conductive structures of the stack structure, and the fill material between horizontally neighboring pillars and substantially surrounded by the first conductive material of the individual conductive structures.
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