CPC H10B 51/20 (2023.02) [H10B 51/10 (2023.02); H10B 51/40 (2023.02)] | 19 Claims |
1. A ferroelectric device comprising:
a first structure comprising a ferroelectric material;
a second structure over the first structure, the second structure comprising metallic electrode; and
a third structure under the first structure, the third structure to induce crystallographic orientation in the first structure and to provide conductive characteristics of a metallic electrode, wherein the third structure comprises a super lattice of at least two materials including an intermetallic material and a metallic electrode material.
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