US 11,743,611 B2
Image sensor controlling a conversion gain imaging device having the same, and method of operating the same
Jungbin Yun, Hwaseong-si (KR); Hwanwoong Kim, Namyangju-si (KR); Eunsub Shim, Hwaseong-si (KR); Kyungho Lee, Suwon-si (KR); and Hongsuk Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 8, 2022, as Appl. No. 17/860,878.
Application 17/860,878 is a continuation of application No. 17/711,809, filed on Apr. 1, 2022.
Application 17/711,809 is a continuation of application No. 16/997,234, filed on Aug. 19, 2020, granted, now 11,310,447, issued on Apr. 19, 2022.
Claims priority of application No. 10-2019-0144199 (KR), filed on Nov. 12, 2019.
Prior Publication US 2022/0345649 A1, Oct. 27, 2022
Int. Cl. H04N 25/59 (2023.01); H04N 25/42 (2023.01); H04N 25/76 (2023.01); H04N 25/709 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/59 (2023.01) [H04N 25/42 (2023.01); H04N 25/709 (2023.01); H04N 25/76 (2023.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a first pixel connected to a column line; and a second pixel connected to the column line,
wherein each of the first pixel and the second pixel includes,
at least one photodiode;
a first floating diffusion region;
a second floating diffusion region;
at least one first transistor connected between the at least one photodiode and the first floating diffusion region;
a second transistor connected between the first floating diffusion region and the second floating diffusion region;
a third transistor connected to the second floating diffusion region;
a fourth transistor having a gate connected to the first floating diffusion region; and
a fifth transistor having a drain connected to a source of the fourth transistor and a source connected to the column line,
wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are directly connected through a metal line, without an intermediate transistor.