CPC H04N 25/59 (2023.01) [H04N 25/42 (2023.01); H04N 25/709 (2023.01); H04N 25/76 (2023.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01)] | 20 Claims |
1. An image sensor comprising:
a first pixel connected to a column line; and a second pixel connected to the column line,
wherein each of the first pixel and the second pixel includes,
at least one photodiode;
a first floating diffusion region;
a second floating diffusion region;
at least one first transistor connected between the at least one photodiode and the first floating diffusion region;
a second transistor connected between the first floating diffusion region and the second floating diffusion region;
a third transistor connected to the second floating diffusion region;
a fourth transistor having a gate connected to the first floating diffusion region; and
a fifth transistor having a drain connected to a source of the fourth transistor and a source connected to the column line,
wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are directly connected through a metal line, without an intermediate transistor.
|