US 11,743,610 B2
Pixel and image sensor including the same
Seokyong Park, Hwaseong-si (KR); and Kyungmin Kim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 6, 2022, as Appl. No. 17/833,397.
Claims priority of application No. 10-2021-0080392 (KR), filed on Jun. 21, 2021.
Prior Publication US 2022/0408039 A1, Dec. 22, 2022
Int. Cl. H04N 25/59 (2023.01); H01L 27/146 (2006.01); H04N 25/766 (2023.01)
CPC H04N 25/59 (2023.01) [H01L 27/14612 (2013.01); H04N 25/766 (2023.01); H01L 27/14643 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A unit pixel circuit, comprising:
a first photodiode;
a second photodiode different from the first photodiode;
a first floating diffusion node configured to accumulate charges generated in the first photodiode;
a second floating diffusion node configured to accumulate charges generated in the second photodiode;
a capacitor connected to the first floating diffusion node and a first voltage node, the capacitor configured to accumulate overflowed charges of the first photodiode;
a first switch transistor connecting the first floating diffusion node to a third floating diffusion node;
a reset transistor connecting the third floating diffusion node to a second voltage node;
a gain control transistor connecting the second floating diffusion node to the third floating diffusion node; and
a second switch transistor connected to both the first voltage node and the second voltage node.