CPC H03K 17/102 (2013.01) [H03K 19/018521 (2013.01); H03K 2217/0054 (2013.01)] | 42 Claims |
1. A circuit, comprising:
a Diffusion-Enhanced N-channel Metal-Oxide-Semiconductor Field Effect Transistor (DE-NMOS FET) including a gate coupled to a node of the circuit, wherein a source and a drain of the DE-NMOS FET are coupled to an input node and an output node of the circuit, respectively;
a voltage source coupled to the node, wherein the voltage source is configured to provide a first voltage at the node, the first voltage greater than a second voltage at the input node by a predetermined amount; and
a current source coupled to the node, the current source configured to supply current to the voltage source.
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