US 11,742,846 B1
Semiconductor switches for high voltage operations
Rohan Sinha, Bengaluru (IN); and Rajat Kulshrestha, Bangalore (IN)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Jun. 23, 2022, as Appl. No. 17/847,917.
Int. Cl. H03K 17/10 (2006.01); H03K 19/0185 (2006.01)
CPC H03K 17/102 (2013.01) [H03K 19/018521 (2013.01); H03K 2217/0054 (2013.01)] 42 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a Diffusion-Enhanced N-channel Metal-Oxide-Semiconductor Field Effect Transistor (DE-NMOS FET) including a gate coupled to a node of the circuit, wherein a source and a drain of the DE-NMOS FET are coupled to an input node and an output node of the circuit, respectively;
a voltage source coupled to the node, wherein the voltage source is configured to provide a first voltage at the node, the first voltage greater than a second voltage at the input node by a predetermined amount; and
a current source coupled to the node, the current source configured to supply current to the voltage source.