US 11,742,632 B2
Nanocavity monolayer laser monolithically integrated with LED pump
Jeehwan Kim, Los Angeles, CA (US); Ning Li, White Plains, NY (US); Devendra K. Sadana, Pleasantville, NY (US); and Brent A. Wacaser, Putnam Valley, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jul. 26, 2019, as Appl. No. 16/522,873.
Application 16/522,873 is a division of application No. 14/799,395, filed on Jul. 14, 2015, granted, now 10,431,956.
Prior Publication US 2019/0363513 A1, Nov. 28, 2019
Int. Cl. H01S 5/10 (2021.01); H01S 3/0933 (2006.01); H01S 5/04 (2006.01); H01S 5/30 (2006.01); H01S 5/11 (2021.01); H01S 5/026 (2006.01); H01L 33/58 (2010.01)
CPC H01S 5/1042 (2013.01) [H01S 3/0933 (2013.01); H01S 5/041 (2013.01); H01S 5/1067 (2013.01); H01S 5/11 (2021.01); H01S 5/30 (2013.01); H01L 33/58 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01); H01S 5/026 (2013.01)] 20 Claims
OG exemplary drawing
 
13. A laser structure including a monolithically formed nanocavity laser and light emitting diode (LED), comprising:
a substrate including silicon (Si) or germanium (Ge);
a buffer layer including a III-V material and having a first surface formed on the substrate;
a light emitting diode (LED) formed on a second surface of the buffer layer and configured to produce visible light;
a lens disposed on the LED to focus the visible light to output focused light;
a photonic crystal layer formed on the LED to receive the focused light; and
a nanocavity laser formed on the photonic crystal layer, is a monolayer of a transition metal dichalcogenide having a chemical formula of MX2 for receiving the focused light through the photonic crystal layer to optically pump the nanocavity laser, where M is selected from the group consisting of: W and Mo and X is selected from the group consisting of: S, Se and Te; wherein the buffer layer further includes an interface material to reduce dislocation defects due to lattice mismatch between the substrate and the buffer layer.