CPC H01S 5/0287 (2013.01) [H01S 5/0203 (2013.01); H01S 5/0282 (2013.01); H01S 5/0425 (2013.01); H01S 5/34333 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/3202 (2013.01); H01S 2304/04 (2013.01)] | 20 Claims |
1. A laser device, comprising:
a substrate having a surface;
a gallium and nitrogen containing cavity region overlying the surface, the gallium and nitrogen containing cavity region characterized by a first end and a second end, the first end comprising a first etched facet and the second end comprising a second etched facet; and
a passivation layer comprising a polycrystalline layer of Al2O3 directly contacting the first etched facet, wherein an interface between the passivation layer and the first etched facet is substantially contaminant free.
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