US 11,742,449 B2
Single photon avalanche diode device
Ching-Ying Lu, San Jose, CA (US); Yangsen Kang, San Jose, CA (US); Shuang Li, San Jose, CA (US); and Kai Zang, San Jose, CA (US)
Assigned to Adaps Photonics Inc., San Jose, CA (US)
Filed by Adaps Photonics Inc., San Jose, CA (US)
Filed on Jul. 22, 2022, as Appl. No. 17/871,712.
Application 17/871,712 is a continuation of application No. 16/775,101, filed on Jan. 28, 2020, granted, now 11,508,867.
Prior Publication US 2022/0367743 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/10 (2006.01); H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 27/146 (2006.01); C30B 25/18 (2006.01); H04N 25/76 (2023.01)
CPC H01L 31/107 (2013.01) [C30B 25/18 (2013.01); H01L 27/14636 (2013.01); H01L 31/02027 (2013.01); H04N 25/76 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A single photon avalanche diode device comprising:
a logic substrate comprising an upper surface;
a sensor substrate bonded to the upper surface of the logic substrate, the sensor substrate comprising a pixel, the pixel comprising:
a passivation material comprising an opening;
an anti-reflective material overlying the passivation material;
an implanted p-type material;
an implanted n-type material; and
a junction region configured from the implanted p-type material and the implanted n-type material; and
a deep trench region bordering the pixel;
a first contact region on a first side of the sensor substrate coupled to the implanted p-type material, the first contact region being at least partially exposed through the opening; and
a second contact region on a second side of the sensor substrate coupled to the implanted n-type material and the logic substrate.