CPC H01L 29/7869 (2013.01) [H01L 27/0207 (2013.01); H01L 27/1225 (2013.01); H01L 29/78696 (2013.01); H01L 22/34 (2013.01); H01L 2924/0002 (2013.01)] | 9 Claims |
1. A light-emitting device comprising:
a display portion, the display portion comprising:
a light-emitting element; and
a first transistor below and electrically connected to the light-emitting element, the first transistor comprising:
a first gate electrode layer over a substrate and a first insulating layer;
a second insulating layer over the first gate electrode layer;
an oxide semiconductor layer over the second insulating layer;
a first wiring layer electrically connected to the oxide semiconductor layer via a first opening provided in a third insulating layer which is provided over and in contact with the oxide semiconductor layer;
a second wiring layer electrically connected to the oxide semiconductor layer via a second opening provided in the third insulating layer; and
a second gate electrode layer over and overlapping with the oxide semiconductor layer and the first gate electrode layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the first gate electrode layer and the second gate electrode layer are connected to each other, and
wherein, in a cross-sectional view, the first wiring layer and the second wiring layer do not overlap with the first gate electrode layer and the second gate electrode layer.
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