US 11,742,431 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Yoshinobu Asami, Kanagawa (JP); Takahisa Ishiyama, Shizuoka (JP); Motomu Kurata, Kanagawa (JP); Ryo Tokumaru, Kanagawa (JP); Noritaka Ishihara, Kanagawa (JP); and Yusuke Nonaka, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Oct. 14, 2021, as Appl. No. 17/501,061.
Application 17/501,061 is a continuation of application No. 16/643,453, granted, now 11,152,513, previously published as PCT/IB2018/056414, filed on Aug. 24, 2018.
Claims priority of application No. 2017-170017 (JP), filed on Sep. 5, 2017; application No. 2017-170018 (JP), filed on Sep. 5, 2017; application No. 2017-237526 (JP), filed on Dec. 12, 2017; application No. 2018-027691 (JP), filed on Feb. 20, 2018; and application No. 2018-027723 (JP), filed on Feb. 20, 2018.
Prior Publication US 2022/0059701 A1, Feb. 24, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/22 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/22 (2013.01); H01L 29/66969 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulator;
a second insulator over the first insulator;
an oxide over the second insulator;
a first conductor and a second conductor apart from each other over the oxide;
a third insulator over the oxide, the first conductor, and the second conductor;
a third conductor over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor;
a fourth insulator covering the oxide, the first conductor, the second conductor, the third insulator, and the third conductor;
a fifth insulator over the fourth insulator;
a sixth insulator over the fifth insulator;
a seventh insulator; and
an eighth insulator,
wherein the seventh insulator is in contact with an upper surface of the first conductor, a bottom surface of the fourth insulator, a side surface of the first conductor, a first side surface of the oxide,
wherein the eighth insulator is in contact with an upper surface of the second conductor, the bottom surface of the fourth insulator, a side surface of the second conductor, a first side surface of the oxide,
wherein an opening reaching the second insulator is formed in part of the fourth insulator, and
wherein the fifth insulator is in contact with the second insulator through the opening.