US 11,742,369 B2
Solid-state image sensing device with a capacitance switching transistor overlapping a photodiode and electronic device having the same
Fumihiko Koga, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Dec. 3, 2021, as Appl. No. 17/541,509.
Application 16/789,960 is a division of application No. 15/544,645, abandoned, previously published as PCT/JP2016/051075, filed on Jan. 15, 2016.
Application 17/541,509 is a continuation of application No. 16/789,960, filed on Feb. 13, 2020, granted, now 11,211,411.
Claims priority of application No. 2015-015538 (JP), filed on Jan. 29, 2015.
Prior Publication US 2022/0093659 A1, Mar. 24, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 25/59 (2023.01); H04N 25/76 (2023.01); H04N 25/77 (2023.01); H04N 25/771 (2023.01); H04N 23/62 (2023.01); H04N 25/50 (2023.01); H10K 39/32 (2023.01)
CPC H01L 27/14612 (2013.01) [H01L 27/146 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01); H01L 27/14647 (2013.01); H01L 27/14667 (2013.01); H04N 25/59 (2023.01); H04N 25/76 (2023.01); H04N 25/77 (2023.01); H04N 25/771 (2023.01); H04N 23/62 (2023.01); H04N 25/50 (2023.01); H10K 39/32 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A solid-state image sensing device comprising:
a photoelectric conversion unit formed outside a semiconductor substrate;
a charge holding unit for holding signal charges generated by the photoelectric conversion unit;
a reset transistor for resetting a potential of the charge holding unit;
a capacitance switching transistor connected to the charge holding unit and directed for switching a capacitance of the charge holding unit;
an additional capacitance device connected to the capacitance switching transistor; and
a photodiode formed in the semiconductor substrate,
wherein, in a plan view, the capacitance switching transistor overlaps the photodiode.
 
11. An electronic device comprising a solid-state image sensing device, the solid-state image sensing device comprising a pixel having:
a photoelectric conversion unit formed outside a semiconductor substrate;
a charge holding unit for holding signal charges generated by the photoelectric conversion unit;
a reset transistor for resetting a potential of the charge holding unit;
a capacitance switching transistor connected to the charge holding unit and directed for switching a capacitance of the charge holding unit;
an additional capacitance device connected to the capacitance switching transistor; and
a photodiode formed in the semiconductor substrate,
wherein, in a plan view, the capacitance switching transistor overlaps the photodiode.