US 11,742,368 B2
Image sensing device and method for forming the same
Byoung Gyu Kim, Seoul (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Mar. 11, 2021, as Appl. No. 17/198,831.
Application 17/198,831 is a division of application No. 16/551,574, filed on Aug. 26, 2019, granted, now 10,964,736.
Claims priority of application No. 10-2019-0016449 (KR), filed on Feb. 13, 2019.
Prior Publication US 2021/0202544 A1, Jul. 1, 2021
Int. Cl. H01L 29/80 (2006.01); H01L 31/112 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/1461 (2013.01) [H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for forming an image sensing device comprising:
forming a first impurity region and a second impurity region in a first substrate;
forming a switching element over the first substrate, the switching element coupled to the first impurity region and the second impurity region;
forming an insulation structure over the first substrate to cover the switching element;
forming a trench exposing the first impurity region by etching the insulation structure; and
placing a photoelectric conversion element in the trench to couple the photoelectric conversion element to the first impurity region, the photoelectric conversion element disposed in a second substrate different from the first substrate and having a shape corresponding to a shape of the trench.