US 11,742,282 B2
Conductive interconnects
Jordan D. Greenlee, Boise, ID (US); Rita J. Klein, Boise, ID (US); Everett A. McTeer, Eagle, ID (US); John D. Hopkins, Meridian, ID (US); Shuangqiang Luo, Boise, ID (US); Song Kai Tan, Singapore (SG); Jing Wai Fong, Singapore (SG); Anurag Jindal, Singapore (SG); and Chieh Hsien Quek, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 7, 2020, as Appl. No. 16/988,422.
Prior Publication US 2022/0044999 A1, Feb. 10, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H10B 43/27 (2023.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76843 (2013.01); H01L 21/76847 (2013.01); H01L 21/76877 (2013.01); H10B 43/27 (2023.02); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An integrated assembly comprising a conductive interconnect extending upwardly from a conductive structure; the conductive interconnect including:
a first conductive material configured as an upwardly-opening container shape having two inner sidewalls surfaces and a base surface extending between the two inner sidewall surfaces, the first conductive material comprising cobalt;
a second conductive material within an interior region along the two inner sidewall surfaces and across the base surface of the upwardly-opening container shape; the first and second conductive materials each consisting of two or more of W, Co and Ni and primarily comprising a same metal as one another and differing from one another in average grain size, the second conductive material having a smaller average grain size relative to an average grain size of the first conductive material; and
a liner between the first conductive material and the second conductive material, the liner comprising metal silicide.