US 11,742,249 B2
Semiconductor device and fabrication method for semiconductor device
Motoyoshi Kubouchi, Matsumoto (JP); Kosuke Yoshida, Matsumoto (JP); Soichi Yoshida, Matsumoto (JP); Koh Yoshikawa, Matsumoto (JP); and Nao Suganuma, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Sep. 5, 2022, as Appl. No. 17/902,921.
Application 17/902,921 is a division of application No. 16/899,523, filed on Jun. 11, 2020, granted, now 11,450,734.
Claims priority of application No. 2019-111761 (JP), filed on Jun. 17, 2019; application No. 2020-006044 (JP), filed on Jan. 17, 2020; and application No. 2020-087040 (JP), filed on May 18, 2020.
Prior Publication US 2023/0040096 A1, Feb. 9, 2023
Int. Cl. H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 21/324 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01)
CPC H01L 22/12 (2013.01) [H01L 21/221 (2013.01); H01L 21/265 (2013.01); H01L 21/26526 (2013.01); H01L 21/324 (2013.01); H01L 27/0664 (2013.01); H01L 29/0611 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A fabrication method for a semiconductor device, the fabrication method comprising:
a measurement step to measure a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed;
a first hydrogen implantation step to adjust an implantation condition in accordance with the thickness of the semiconductor substrate, and implant hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate; and
an anneal step to anneal the semiconductor substrate and form, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.