CPC H01L 22/12 (2013.01) [H01L 21/221 (2013.01); H01L 21/265 (2013.01); H01L 21/26526 (2013.01); H01L 21/324 (2013.01); H01L 27/0664 (2013.01); H01L 29/0611 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] | 7 Claims |
1. A fabrication method for a semiconductor device, the fabrication method comprising:
a measurement step to measure a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed;
a first hydrogen implantation step to adjust an implantation condition in accordance with the thickness of the semiconductor substrate, and implant hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate; and
an anneal step to anneal the semiconductor substrate and form, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.
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