CPC H01L 21/76224 (2013.01) [H01L 27/0259 (2013.01); H01L 29/0649 (2013.01); H01L 29/66234 (2013.01); H01L 29/73 (2013.01)] | 20 Claims |
1. A device comprising:
a bipolar junction transistor comprising:
a base region connected to a power supply node;
an emitter region connected to the power supply node; and
a collector region between the emitter region and the base region, the collector region connected to a ground node; and
an isolation structure between the emitter region and the collector region, the isolation structure comprising a first partition structure extending substantially abreast at least one of the emitter region and the collector region.
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