US 11,742,228 B2
Substrate processing method and substrate processing system
Risako Matsuda, Miyagi (JP); Shinobu Kinoshita, Miyagi (JP); Manabu Oie, Miyagi (JP); and Keita Shouji, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 2, 2021, as Appl. No. 17/189,691.
Claims priority of application No. 2020-041539 (JP), filed on Mar. 11, 2020.
Prior Publication US 2021/0287922 A1, Sep. 16, 2021
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/67253 (2013.01) [H01L 21/0262 (2013.01); H01L 21/3065 (2013.01); H01L 22/10 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing method of processing a substrate using a gas supplied to a chamber, the method comprising:
(a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas;
(b) supplying the gas into the chamber;
(c) measuring the pressure of the gas by the flow rate controller;
(d) stopping the supply of the gas into the chamber;
(e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and
(f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).