US 11,742,218 B2
Semiconductor device package having metal thermal interface material and method for forming the same
Chien-Li Kuo, Hsinchu (TW); Chin-Fu Kao, Taipei (TW); and Chen-Shien Chen, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 7, 2021, as Appl. No. 17/314,522.
Prior Publication US 2022/0359228 A1, Nov. 10, 2022
Int. Cl. H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01)
CPC H01L 21/4882 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 21/56 (2013.01); H01L 24/27 (2013.01); H01L 2224/214 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device package, comprising:
bonding a semiconductor device to a first surface of a package substrate;
placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and a top surface of the semiconductor device;
heating the metal TIM to melt the metal TIM;
pressing the metal lid downward so that the molten metal TIM laterally flows toward a boundary of the semiconductor device along a first direction, and an outermost point of a lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device;
lifting the metal lid upward so that the molten metal TIM laterally flows toward a center of the top surface of the semiconductor device along a second direction opposite to the first direction, and the outermost point of the lateral sidewall of the molten metal TIM is within the boundary of the semiconductor device; and
bonding the metal lid to the semiconductor device through the metal TIM by cooling the molten metal TIM.