US 11,742,215 B2
Methods for forming a semiconductor device
Hans-Joachim Schulze, Taufkirchen (DE); Alexander Breymesser, Villach (AT); Bernhard Goller, Villach (AT); Matthias Kuenle, Villach (AT); Helmut Oefner, Zorneding (DE); Francisco Javier Santos Rodriguez, Villach (AT); and Stephan Voss, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 28, 2021, as Appl. No. 17/386,699.
Claims priority of application No. 102020119953.8 (DE), filed on Jul. 29, 2020.
Prior Publication US 2022/0037165 A1, Feb. 3, 2022
Int. Cl. H01L 21/324 (2006.01); H01L 21/78 (2006.01); H01L 21/265 (2006.01)
CPC H01L 21/3247 (2013.01) [H01L 21/26506 (2013.01); H01L 21/7806 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate;
increasing the porosity of the first semiconductor layer;
first annealing the first semiconductor layer at a temperature of at least 1050° C.;
forming a second semiconductor layer on the first semiconductor layer;
a second annealing in an atmosphere of hydrogen, the second annealing performed after the first annealing but before forming the second semiconductor layer; and
separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.