US 11,742,211 B2
Substrate processing method
Akira Horikoshi, Kyoto (JP); Miyoshi Ueno, Kyoto (JP); Yayoi Takeichi, Kyoto (JP); Takaaki Yanagida, Kyoto (JP); Kenji Nakanishi, Kyoto (JP); Shigeru Takatsuji, Kyoto (JP); and Takahiro Kimura, Kyoto (JP)
Assigned to SCREEN HOLDINGS CO., LTD., Kyoto (JP)
Filed by SCREEN HOLDINGS CO., LTD., Kyoto (JP)
Filed on Aug. 11, 2021, as Appl. No. 17/399,543.
Claims priority of application No. 2020-160372 (JP), filed on Sep. 25, 2020.
Prior Publication US 2022/0102161 A1, Mar. 31, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31133 (2013.01) [H01L 21/0206 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A substrate processing method of removing a resist formed on an upper surface of a substrate from said upper surface of said substrate, said substrate processing method comprising:
forming a liquid film of a processing solution on said upper surface of said substrate by supplying said processing solution onto said upper surface of said substrate;
executing, under atmospheric pressure, plasma processing on said liquid film of said processing solution formed on said upper surface of said substrate, wherein said liquid film is formed at least in part of said upper surface of said substrate, and said liquid film has a first thickness; and
executing, under atmospheric pressure, plasma processing on said liquid film of said processing solution formed on said upper surface of said substrate, wherein said liquid film is formed at least in part of said upper surface of said substrate, and said liquid film has a second thickness,
wherein said first thickness is smaller than said second thickness,
wherein said first thickness is 0.1 mm or more and less than 0.25 mm, and
wherein said second thickness is 0.35 mm or more and 2 mm or less.