CPC H01L 21/28035 (2013.01) [H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01)] | 16 Claims |
1. A microelectronic device, comprising:
a substrate;
a trench structure in the substrate, the trench structure including:
a trench in the substrate;
a seed layer in the trench, the seed layer including an amorphous dielectric material; and
a polysilicon core contacting the amorphous dielectric material, the polysilicon core filling the trench structure inside the seed layer, the polysilicon core having silicon grains, wherein an average size of the silicon grains is greater than half a minimum lateral dimension of the trench structure inside the seed layer.
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