US 11,742,204 B2
Multi-layer structures and methods of forming
Chang-Jung Hsueh, Taipei (TW); Chen-En Yen, Changhua County (TW); Chin Wei Kang, Tainan (TW); Kai Jun Zhan, Taoyuan (TW); Wei-Hung Lin, Xinfeng Township (TW); Cheng Jen Lin, Kaohsiung (TW); Ming-Da Cheng, Taoyuan (TW); Ching-Hui Chen, Hsinchu (TW); and Mirng-Ji Lii, Sinpu Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 10, 2021, as Appl. No. 17/316,008.
Application 17/316,008 is a continuation of application No. 16/694,121, filed on Nov. 25, 2019, granted, now 11,004,685.
Claims priority of provisional application 62/773,559, filed on Nov. 30, 2018.
Prior Publication US 2021/0265165 A1, Aug. 26, 2021
Int. Cl. H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/31058 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
a multi-layer structure disposed on the substrate, the multi-layer structure comprising a first layer, a second layer over the first layer, and a third layer over the second layer;
a fourth layer, wherein a first portion of the fourth layer extends over the third layer of the multi-layer structure and a second portion of the fourth layer extends over the substrate away from the multi-layer structure, the first portion of the fourth layer is discontinuous with the second portion of the fourth layer, a portion of the second layer of the multi-layer structure is between the first portion of the fourth layer and the second portion of the fourth layer, and the second layer of the multi-layer structure being disposed at least partially at a same level as the second portion of the fourth layer; and
a fifth layer, wherein a first portion of the fifth layer contacts the first portion of the fourth layer, a second portion of the fifth layer contacts the second portion of the fourth layer, and the first portion of the fifth layer is continuous with the second portion of the fifth layer.