CPC H01L 21/0228 (2013.01) [C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/402 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0214 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A method comprising:
depositing a dielectric layer; and
performing an anneal process on the dielectric layer, wherein the anneal process comprises:
a first wet anneal process performed at a first temperature;
a second wet anneal process performed at a second temperature higher than the first temperature; and
a dry anneal process performed at a third temperature higher than the first temperature.
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