US 11,742,200 B2
Composition and methods using same for carbon doped silicon containing films
Haripin Chandra, San Marcos, CA (US); Xinjian Lei, Vista, CA (US); Anupama Mallikarjunan, Taipei (TW); and Moo-Sung Kim, Gyunggi-Do (KR)
Assigned to VERSUM MATERIALS US, LLC, Tempe, AZ (US)
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
Filed on Oct. 14, 2021, as Appl. No. 17/501,903.
Application 17/501,903 is a division of application No. 16/748,914, filed on Jan. 22, 2020, granted, now 11,152,206.
Application 16/748,914 is a division of application No. 15/654,426, filed on Jul. 19, 2017, abandoned.
Claims priority of provisional application 62/367,260, filed on Jul. 27, 2016.
Prior Publication US 2022/0037151 A1, Feb. 3, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01)
CPC H01L 21/02208 (2013.01) [C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A precursor composition used for an ALD process comprising:
(a) at least one silicon precursor compound having one Si—C—Si or two Si—C—Si linkages selected from the group consisting of 1,1,1,3,3,3-hexachloro-2-methyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2,2-dimethyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2-ethyl-1,3-disilapropane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, and 1,1,5,5-tetraachloro-1,3,5-trisilapentane; and;
(b) at least one solvent selected from the group consisting of ether, tertiary amine, siloxanes, alkyl hydrocarbon, and tertiary aminoether.