CPC H01L 21/02208 (2013.01) [C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01)] | 5 Claims |
1. A precursor composition used for an ALD process comprising:
(a) at least one silicon precursor compound having one Si—C—Si or two Si—C—Si linkages selected from the group consisting of 1,1,1,3,3,3-hexachloro-2-methyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2,2-dimethyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2-ethyl-1,3-disilapropane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, and 1,1,5,5-tetraachloro-1,3,5-trisilapentane; and;
(b) at least one solvent selected from the group consisting of ether, tertiary amine, siloxanes, alkyl hydrocarbon, and tertiary aminoether.
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