US 11,742,197 B2
Cleavable additives for use in a method of making a semiconductor substrate
Andreas Klipp, Ludwigshafen (DE); Christian Bittner, Ludwigshafen (DE); Simon Braun, Hassloch (DE); Guenter Oetter, Ludwigshafen (DE); and Yeni Burk, Ludwigshafen (DE)
Assigned to BASF SE, Ludwigshafen am Rhein (DE)
Appl. No. 17/44,928
Filed by BASF SE, Ludwigshafen am Rhein (DE)
PCT Filed Apr. 2, 2019, PCT No. PCT/EP2019/058247
§ 371(c)(1), (2) Date Oct. 2, 2020,
PCT Pub. No. WO2019/192990, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 18165603 (EP), filed on Apr. 4, 2018.
Prior Publication US 2021/0166934 A1, Jun. 3, 2021
Int. Cl. H01L 21/02 (2006.01); C07C 271/12 (2006.01)
CPC H01L 21/02057 (2013.01) [C07C 271/12 (2013.01)] 8 Claims
 
1. A method of cleaning and/or rinsing a semiconductor substrate, the method comprising:
making or providing a semiconductor substrate having at least one surface and having one or more materials on at least one of said at least one surface,
contacting said one or more materials with an organic compound of the following formula I:
A-L-B  (I),
or a salt thereof, wherein
A is a straight-chain or branched aliphatic hydrocarbon group having a total number of 4 to 20 carbon atoms, which is substituted by 1 to 4 ether groups, or is unsubstituted,
B is a straight-chain or branched aliphatic hydrocarbon group having a total number of 1 to 6 carbon atoms, which is substituted by one or two ionic groups independently selected from the group consisting of anionic groups and cationic groups,
and
L is a urethane group,
removing an amount of said compound of formula I or the salt thereof from said at least one surface, together with one or more of said one or more materials, to obtain a cleaned or rinsed semiconductor substrate having a residual amount of said compound of formula I or the salt thereof attached to at least one of said at least one surface,
cleaving a fraction or total of said residual amount into a set of fragments by heating the fraction or total of said residual amount to a cleaving temperature at a cleaving pressure, each fragment having a boiling point below said cleaving temperature at the cleaving pressure applied, and
removing said set of fragments from said at least one surface by evaporation.