CPC H01J 37/32183 (2013.01) [H01J 37/32128 (2013.01); H01J 37/32715 (2013.01)] | 14 Claims |
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber and including an electrode;
an electric bias generator coupled to the electrode and configured to generate an electric bias having a first voltage level in a first period within one cycle and a second voltage level in second and third periods within the one cycle, an absolute value of the first voltage level being greater than an absolute value of the second voltage level; and
a radio frequency power source coupled to the plasma processing chamber and configured to generate a radio frequency power having a first power level in the first period within the one cycle, a second power level in the second period within the one cycle, and a third power level in the third period within the one cycle, the second power level being greater than the third power level, and the third power level being greater than the first power level.
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