US 11,742,183 B2
Plasma processing apparatus and control method
Ryuji Hisatomi, Miyagi (JP); Chishio Koshimizu, Miyagi (JP); and Michishige Saito, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 19, 2021, as Appl. No. 17/531,348.
Application 17/531,348 is a continuation of application No. 16/728,203, filed on Dec. 27, 2019, granted, now 11,201,034.
Claims priority of application No. 2018-248260 (JP), filed on Dec. 28, 2018; and application No. 2019-224853 (JP), filed on Dec. 12, 2019.
Prior Publication US 2022/0076921 A1, Mar. 10, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32146 (2013.01) [H01J 37/32009 (2013.01); H01J 37/32183 (2013.01); H01J 37/32724 (2013.01); H01J 37/32467 (2013.01); H01J 37/32633 (2013.01); H01J 37/32642 (2013.01); H01J 37/32651 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing container;
an electrode configured to place a substrate thereon in the processing container;
a plasma generation source configured to supply plasma into the processing container;
a bias power supply configured to supply a bias power of a desired waveform to the electrode;
a deposition shield provided in an inner wall of the processing container;
a power supply configured to supply a voltage of a desired waveform to the deposition shield; and
a controller configured to control the voltage such that a first state where the voltage has a first voltage value and a second state where the voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied when a potential of the electrode is positive, and the second voltage value is applied when the potential of the electrode is negative.