CPC H01J 37/32146 (2013.01) [H01J 37/32009 (2013.01); H01J 37/32183 (2013.01); H01J 37/32724 (2013.01); H01J 37/32467 (2013.01); H01J 37/32633 (2013.01); H01J 37/32642 (2013.01); H01J 37/32651 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01)] | 16 Claims |
1. A plasma processing apparatus comprising:
a processing container;
an electrode configured to place a substrate thereon in the processing container;
a plasma generation source configured to supply plasma into the processing container;
a bias power supply configured to supply a bias power of a desired waveform to the electrode;
a deposition shield provided in an inner wall of the processing container;
a power supply configured to supply a voltage of a desired waveform to the deposition shield; and
a controller configured to control the voltage such that a first state where the voltage has a first voltage value and a second state where the voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied when a potential of the electrode is positive, and the second voltage value is applied when the potential of the electrode is negative.
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