US 11,742,181 B2
Control method and plasma processing apparatus
Chishio Koshimizu, Miyagi (JP); Taichi Hirano, Miyagi (JP); Toru Hayasaka, Miyagi (JP); Shinji Kubota, Miyagi (JP); Koji Maruyama, Miyagi (JP); and Takashi Dokan, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 28, 2021, as Appl. No. 17/359,642.
Application 17/359,642 is a continuation of application No. 17/017,039, filed on Sep. 10, 2020.
Application 17/017,039 is a continuation in part of application No. PCT/JP2019/023238, filed on Jun. 12, 2019.
Claims priority of application No. 2018-119344 (JP), filed on Jun. 22, 2018; and application No. 2019-105708 (JP), filed on Jun. 5, 2019.
Prior Publication US 2021/0327681 A1, Oct. 21, 2021
Int. Cl. H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32128 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01J 37/32174 (2013.01); H01J 37/32532 (2013.01); H01L 21/3065 (2013.01)] 33 Claims
OG exemplary drawing
 
13. A controller in a plasma processing apparatus comprising:
circuitry configured to
control a low frequency (LF) radio frequency (RF) power supply to generate LF power at a first radio frequency (RF) frequency, a waveform of the first RF frequency having a cycle, a first half-cycle of the waveform being separated from a second half cycle of the waveform at a zero-crossing;
control a high frequency (HF) RF power supply to generate HF power at a changeable RF frequency that is higher in frequency than the first RF frequency, the LF power and the HF power being applied to an electrode in the plasma processing apparatus; and
control the HF RF power supply to provide the HF power at a first HF frequency during the first half-cycle of the waveform of first RF frequency, and provide the HF power at a second HF frequency during the second half-cycle of the waveform of the first RF frequency.
 
33. A non-transitory computer readable storage device having stored therein computer readable instructions that when executed by controller circuitry cause the controller circuitry to perform a control process in a plasma processing apparatus comprising:
generating, with a low frequency (LF) radio frequency (RF) power supply, LF power at a first radio frequency (RF) frequency, a waveform of the first RF frequency having a cycle, a first half-cycle of the waveform being separated from a second half cycle of the waveform at a zero-crossing;
generating, with a high frequency (HF) RF power supply, HF power at a changeable RF frequency that is higher in frequency than the first RF frequency, the LF power and the HF power being applied to an electrode in the plasma processing apparatus; and
controlling the HF RF power supply to provide the HF power at a first HF frequency during the first half-cycle of the waveform of first RF frequency, and provide the HF power at a second HF frequency during the second half-cycle of the waveform of the first RF frequency.