US 11,742,180 B2
Plasma processing method and plasma processing apparatus
Chishio Koshimizu, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jul. 2, 2020, as Appl. No. 16/919,650.
Claims priority of application No. 2019-130978 (JP), filed on Jul. 16, 2019.
Prior Publication US 2021/0020407 A1, Jan. 21, 2021
Int. Cl. H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01J 37/248 (2006.01)
CPC H01J 37/32082 (2013.01) [H01J 37/248 (2013.01); H01J 37/32568 (2013.01)] 5 Claims
OG exemplary drawing
 
1. An apparatus for plasma processing comprising:
a chamber;
a substrate support provided in the chamber and including a lower electrode and an electrostatic chuck provided on the lower electrode;
a radio frequency power source configured to supply a radio frequency power having a first frequency to generate plasma in the chamber;
a bias power source configured to supply a bias to the lower electrode when plasma is being generated in the chamber for plasma processing on the substrate which is placed on the substrate support;
a power source device configured to apply a positive voltage to a conductive member extending closer to a grounded side wall of the chamber than a substrate placed on the substrate support; and
a controller configured to control the power source device; wherein
the bias is radio frequency bias power having a second frequency or a pulsed negative voltage which is periodically applied to the lower electrode at the second frequency,
a cycle of the bias defined by the second frequency includes a first period in which a potential of the substrate is negative and a second period in which a potential of the substrate is equal to or greater than 0, and
the controller is configured to control the power source device to apply the positive voltage to the conductive member in the first period in the cycle and not to apply the positive voltage to the conductive member in the second period in the cycle.