US 11,742,178 B2
Ion milling device and milling processing method using same
Hitoshi Kamoshida, Tokyo (JP); Hisayuki Takasu, Tokyo (JP); Atsushi Kamino, Tokyo (JP); Shota Aida, Tokyo (JP); and Megumi Nakamura, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/637,728
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Aug. 23, 2019, PCT No. PCT/JP2019/033147
§ 371(c)(1), (2) Date Feb. 23, 2022,
PCT Pub. No. WO2021/038650, PCT Pub. Date Mar. 4, 2021.
Prior Publication US 2022/0293391 A1, Sep. 15, 2022
Int. Cl. H01J 37/305 (2006.01); H01J 37/08 (2006.01); H01J 37/20 (2006.01); H01J 37/304 (2006.01)
CPC H01J 37/3056 (2013.01) [H01J 37/08 (2013.01); H01J 37/20 (2013.01); H01J 37/304 (2013.01); H01J 2237/026 (2013.01); H01J 2237/20207 (2013.01); H01J 2237/24535 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An ion milling device comprising:
a sample stage on which a sample is placed and whose sample placement surface is provided with a first insulating material;
an ion source configured to emit an unfocused ion beam toward the sample;
a shielding plate configured to shield the ion beam and provided with a second insulating material on a surface facing the sample placement surface;
a stage controller configured to cause the sample stage to perform a swing operation centered on a swing axis set to be orthogonal to an ion beam center of the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane including the ion beam center and perpendicularly intersecting the swing axis and the sample placement surface of the sample stage; and
a control device configured to repeat a first mode operation and a second mode operation to mill the sample, wherein
the sample is disposed so as to be in contact with the second insulating material of the shielding plate and to protrude from the shielding plate toward a direction of the swing axis, and
the control device causes, in the first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes, in the second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove a sputter particle adhered again to the sample in the first mode operation.