US 11,741,285 B2
Semiconductor device and method of manufacturing the same
Giyoung Yang, Seoul (KR); and Ingyum Kim, Bucheon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 29, 2021, as Appl. No. 17/361,854.
Claims priority of application No. 10-2020-0103161 (KR), filed on Aug. 18, 2020.
Prior Publication US 2022/0058327 A1, Feb. 24, 2022
Int. Cl. G06F 30/392 (2020.01); G06F 30/396 (2020.01); H01L 27/088 (2006.01)
CPC G06F 30/392 (2020.01) [G06F 30/396 (2020.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having an active region;
a first group of standard cells arranged in a first row region of the active region,
wherein the first row region of the active region extends lengthwise in a first direction;
a second group of standard cells arranged in a second row region of the active region,
wherein the second row region extends lengthwise in the first direction along a first side of the first row region, and
wherein a first boundary extends in the first direction and is formed between the first row region and the second row region;
a third group of standard cells arranged in a third row region of the active region,
wherein the third row region extends lengthwise in the first direction along a second side of the first row region,
wherein a second boundary extends in the first direction and is formed between the first row region and the third row region, and
wherein the first side of the first row region and the second side of the first row region are opposite with each other in a second direction different from the first direction;
a first power supply line extending lengthwise in the first direction along the first boundary between the first row region and the second row region, and overlapping partially each of the first row region and the second row region; and
a second power supply line extending lengthwise in the first direction along the second boundary between the first row region and the third row region, and overlapping partially each of the first row region and the third row region,
wherein each of the first to third groups of standard cells comprises a plurality of transistors including a plurality of active fins which are provided with the active region,
wherein the plurality of active fins protrude from a main surface of the active region and extend lengthwise in the first direction, and
wherein the plurality of active fins are spaced apart from each other in the second direction without overlapping the first and second boundaries.